Stellenbezeichnung: Master student (m/f/d)
Arbeitsort / Location: Berlin-Adlershof
Job Beschreibung: 28.09.2023
Studentenjobs / Praktika / Abschlussarbeiten Physik
The Leibniz-Institut für Kristallzüchtung (IKZ) is a leading research institution in the area of science & technology as well as service & transfer of crystalline materials. Our goal is to enable solutions for urgent societal challenges (e.g. communication, artificial intelligence, climate protection, health etc.) by modern electronic & photonic technologies. The work covers the full spectrum from basic over applied research up to pre-industrial development and is performed in collaboration with national and international partners from university, academy and industry. The institute is part of Forschungsverbund Berlin (https://www.fv-berlin.de/) and a member of the Leibniz Association . You can find more details on the institute webpage: .
The Leibniz-Institut für Kristallzüchtung currently looking for a
Master student (m/f/d)
for the master thesis topic: „PVD growth and post-growth recrystallization of tungsten disulfide towards fabrication of wafer-scale single crystalline monolayers”.
Transition metal dichalcogenides continue to attract considerable attention as material platform to study fundamental physical properties of two-dimensional (2D) van der Waals materials and, in view of applications, as extremely thin opto-electronic devices. Potential applications include atomically thin metallic and semiconducting layers used as (mem)transistors, photodetectors or spintronic devices, just to name a few. Targeting these exciting fields, however, requires crystalline films with tuneable material composition, layer thickness, and crystalline perfection comparable to, or even exceeding that of currently available bulk crystals. The synthesis of films satisfying these requirements continues to be very challenging.
The master`s thesis is dedicated to the synthesis of wafer-scale single crystalline layers of semiconducting tungsten disulfide (WS2). WS2 films with a layer thickness ranging from sub- to several monoatomic layers will be grown by molecular beam epitaxy and then subjected to an annealing treatment in a Sulphur environment in a tube furnace. The influence of the annealing treatment on the quality of the grown films will be investigated using various characterization techniques. The overarching goal of the project is to balance the growth and annealing processes in such a way that the formation of large, ideally wafer scale WS2 crystalline domains is possible.
The candidate will perform the research activities in the “Semiconductor Nanostructures” group.
- Growth of WS2 films on single crystalline wafers by molecular beam epitaxy
- Optimization of the deposition process by varying the growth temperature and stoichiometry
- Postgrowth annealing of the samples in a tube furnace
- Characterization of the films by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), Raman and absorption spectroscopy
- Layer transfer and electrical transport measurements of successful samples in a field effect transistor geometry.
The candidate must have a Bachelor or an equivalent degree in physics, physical chemistry,
chemistry, materials science, or a related discipline. Because of the international team, candidates with good English language skills would be preferred.
The Leibniz-Institut für Kristallzüchtung actively supports work-life balance and is an equal opportunity employer. Female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants preference will be given to disabled candidates.
If you want to have more information about the project, contact us: Dr. Sergey Sadofiev (Tel.: 030/6392-3107, firstname.lastname@example.org) or Dr. Jens Martin (Tel.: 030/6392-2857, email@example.com).
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